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High Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm Thickness

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High Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm Thickness

Brand Name : zmkj

Model Number : r-axis carrier sapphire wafer

Place of Origin : china

MOQ : 10pcs

Price : by case

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1000pcs per month

Delivery Time : 3-5weeks

Packaging Details : in 25pcs cassette wafer box under 100grade cleaning room

material : sapphire single crystal

orientation : R-axis

surface : ssp or dsp

thickness : 0.7mm

application : carrier

growth method : ky

TTV : <3um

size : 4.125inch/6.125inch/6inch/8inch

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2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness

TTV<3um 4.125inch/6inch/6.125inch/dia159mm R-axis sapphire Carrier wafers for SOS GaAs epitaxy

About synthetic sapphire crystal

The Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries.
High-purity, aluminum oxide is melted in a crucible at over 2100 degrees Celsius. Typically the crucible is made of tungsten or molybdenum. A precisely oriented seed crystal is dipped into the molten alumina. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt.
After single crystal sapphire boules are grown, they are core-drilled into cylindrical rods, The rods are sliced up into the desired window thickness and finally polished to the desired surface finish.

High Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm Thickness

Use as substrate for semiconducting circuits
Thin sapphire wafers were the first successful use of an insulating substrate upon which to deposit silicon to make the integrated circuits known as silicon on sapphire or "SOS", Besides its excellent electrical insulating properties, sapphire has high thermal conductivity. CMOS chips on sapphire are especially useful for high-power radio-frequency (RF) applications such as those found in cellular telephones, public-safety band radios, and satellite communication systems.
Wafers of single-crystal sapphire are also used in the semiconductor industry as substrates for the growth of devices based on gallium nitride (GaN). The use of sapphire significantly reduces the cost, because it has about one-seventh the cost of germanium. Gallium nitride on sapphire is commonly used in blue light-emitting diodes (LEDs).


Used as a window material
Synthetic sapphire (sometimes referred to as sapphire glass) is commonly used as a window material, because it is both highly transparent to wavelengths of light between 150 nm (UV) and 5500 nm (IR) (the visible spectrum extends about 380 nm to 750 nm, and extraordinarily scratch-resistant. The key benefits of sapphire windows are:
* Very wide optical transmission band from UV to near-infrared
* Significantly stronger than other optical materials or glass windows
* Highly resistant to scratching and abrasion (9 on the Mohs scale of mineral hardness scale, the 3rd hardest natural substance next to moissanite and diamonds)
* Extremely high melting temperature (2030 °C)

High Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm Thickness

Sapphire Properties

GENERAL
Chemical Formula
Al2O3
Crystal Stucture
Hexagonal System ((hk o 1)
Unit Cell Dimension
a=4.758 Å,Å c=12.991 Å, c:a=2.730
PHYSICAL
Metric
English (Imperial)
Density
3.98 g/cc
0.144 lb/in3
Hardness
1525 - 2000 Knoop, 9 mhos
3700° F
Melting Point
2310 K (2040° C)
STRUCTURAL
Tensile Strength
275 MPa to 400 MPa
40,000 to 58,000 psi
at 20°
400 MPa
58,000 psi (design min.)
at 500° C
275 MPa
40,000 psi (design min.)
at 1000° C
355 MPa
52,000 psi (design min.)
Flexural Stength
480 MPa to 895 MPa
70,000 to 130,000 psi
Compression Strength
2.0 GPa (ultimate)
300,000 psi (ultimate)

CATALOGU & Stcok List

Standard wafer

2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP
4 inch C-plane sapphire wafer SSP/DSP
6 inch C-plane sapphire wafer SSP/DSP
Special Cut
A-plane (1120) sapphire wafer
R-plane (1102) sapphire wafer
M-plane (1010) sapphire wafer
N-plane (1123) sapphire wafer
C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis
Other customized orientation
Customized Size
10*10mm sapphire wafer
20*20mm sapphire wafer
Ultra thin (100um) sapphire wafer
8 inch sapphire wafer

Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS
4 inch C-plane PSS

2inch

DSP C-AXIS 0.1mm/ 0.175mm/0.2mm/0.3mm/0.4mm/0.5mm/1.0mmt

SSP C-axis 0.2/0.43mm

(DSP&SSP) A-axis/M-axis/R-axis 0.43mm

3inch

DSP/ SSP C-axis 0.43mm/0.5mm

4Inch

dsp c-axis 0.4mm/ 0.5mm/1.0mm

ssp c-axis 0.5mm/0.65mm/1.0mmt

6inch

ssp c-axis 1.0mm/1.3mmm

dsp c-axis 0.65mm/ 0.8mm/1.0mmt

High Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm ThicknessHigh Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm Thickness

Item Parameter Spec Unit
1 Product Name Sapphire Wafer (Al2O3)
2 Diameter 2” 4” 6” mm
3 Thickness 430± 25 650± 25 1000 ± 25 μm
4 Surface Orientation C-Plane (0001) tilted M-axis 0.2°/0.35°± 0.1° degree
5 Primary Flat A-Axis (11-20) ± 0.2° degree
Orientation Length 16 ± 0.5 31 ± 1.0 47.5 ± 2.0 mm
6 TTV < 10 < 10 < 25 μm
7 Bow -10 ~ 0 -15 ~ 0 -30 ~ 0 μm
8 Warp 10 20 30 μm
9 Roughness Front Side 0.5 0.5 0.5 nm
10 Roughness Back Side 1.0 ± 0.3 μm
11 Wafer Edge R-Type or T-Type
12 Laser Mark Customize

OUR FACTORY

Payment / Shipping

Q: What's the way of shipping and cost?

(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.

(2) If you have your own express number, it's great.

(3) Freight=USD35.0(the first weight) + USD12.0/kg

Q: How to pay?

(1) T/T, PayPal, West Union, MoneyGram and

Assurance payment on Alibaba and etc..

(2) Bank Fee: West Union-USD30.00(≤USD3000.00),

T/T-USD20.00+, PayPal-5%. Please consult the local bank.

Q: What's the deliver time?

(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.

Q: Can I customize the products based on my need?

Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.


Product Tags:

sapphire wafer

      

silicon substrate

      
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